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Image Search Results
Journal: Scientific Reports
Article Title: High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
doi: 10.1038/s41598-017-17273-6
Figure Lengend Snippet: Grain size of the poly-Ge layers. ( a – c ) SEM and ( d–f ) EBSD images of the samples annealed at 450 °C with T d = ( a,d ) 50 °C ( b,e ) 125 °C, and ( c,f ) 200 °C. The coloration in the EBSD images indicates the crystal orientation according to the legend inserted in ( d ). ( g ) Average grain size determined by the EBSD analyses for samples with T g = 375 °C, 400 °C, and 450 °C as a function of T d . The data determined by the electrical properties of samples with T g = 450 °C are also shown.
Article Snippet: The
Techniques: